Advisor: Prof. David Sellmyer

Abstract: Spin-gapless semiconductors (SGS) are a special class of materials having novel spin-dependent electronic properties, owing to its unique electronic structure. The band structure of SGS has an energy gap only for a particular spin-orientation, while the band gap disappears in the opposite spin-orientation direction. This phenomenon leads to high carrier-spin-polarization and promising spin-controlled electronic and magnetic properties for spintronics applications. In this talk, the electronic structure and associated characteristics of SGS will be described with a few examples of theoretically and/or experimentally investigated systems. In addition, a proposal for the synthesis and characterization of several new spin-gapless materials that can have superior electronic and magnetic properties will be presented. Finally, the expected characterization results of the proposed spin-gapless semiconductors will be discussed along with their scientific and technological importance.