Implementation of two-dimensional transition metal dichalcogenides in a field effect transistor
Comprehensive Exam
2:00 pm
Jorgensen Hall Room: 207
Advisor: Professor Peter A. Dowben
Abstract:
The semiconducting transition metal dichalcogenides (TMDs) are two-dimensional materials with finite band gaps. Much of the recent research effort, in TMDs, has been applied to investigating these materials as a channel material for energy-efficient, low-power switching and flexible next generation field-effect transistors (FETs). The important performance parameters to measure, of the transistors, include mobility, current on/off ratio, and subthreshold swing. Introducing high – ? dielectrics onto such channel material shows drastic enhancement of the mobility of TMD based field-effect transistors due to the suppression of the extrinsic environmental scattering effect. The phase engineering and van der Waals heterostructures may solve the problem of having higher contact resistance between metal contacts and two-dimensional channel originated from the van der Waals gap in addition to the inherent Schottky barrier, but little is in fact know about the interface with the likely contact materials. Additionally, using TMDs as a two-dimensional channel for spin-FETs and tunnel FETs can provide useful solutions to achieve devices with low power consumption.
Abstract:
The semiconducting transition metal dichalcogenides (TMDs) are two-dimensional materials with finite band gaps. Much of the recent research effort, in TMDs, has been applied to investigating these materials as a channel material for energy-efficient, low-power switching and flexible next generation field-effect transistors (FETs). The important performance parameters to measure, of the transistors, include mobility, current on/off ratio, and subthreshold swing. Introducing high – ? dielectrics onto such channel material shows drastic enhancement of the mobility of TMD based field-effect transistors due to the suppression of the extrinsic environmental scattering effect. The phase engineering and van der Waals heterostructures may solve the problem of having higher contact resistance between metal contacts and two-dimensional channel originated from the van der Waals gap in addition to the inherent Schottky barrier, but little is in fact know about the interface with the likely contact materials. Additionally, using TMDs as a two-dimensional channel for spin-FETs and tunnel FETs can provide useful solutions to achieve devices with low power consumption.